Get 2d Modeling Of Gan Hemts Incorporating The

This guide provides a comprehensive overview of how to fill out the 2D modeling of GaN HEMTs incorporating the piezoelectric effect online. The instructions are designed to assist users at all levels, ensuring each section and field of the form is completed accurately.

Follow the steps to complete the 2D modeling form online.

1. Click ‘Get Form’ button to obtain the form and open it in the editor.
2. Fill in the 'Report Date' field with the current date or the date relevant to your project.
3. Complete the 'Report Type and Dates Covered' section by specifying that this is a Master's Thesis and entering the dates of relevance.
4. In the 'Title and Subtitle' section, enter the full title of your thesis, ensuring proper capitalization: 2-D modeling of GaN HEMTs incorporating the piezoelectric effect.
5. Input your name in the 'Author(s)' section, along with your title if applicable.
6. For the 'Performing Organization Name(s) and Address(es)' section, provide the details of your institution, including the address.
7. If applicable, fill in the 'Funding Numbers' section, detailing any grant or funding information.
8. Complete the 'Abstract' section with a concise summary of your thesis, not exceeding 200 words.
9. Under 'Keywords', list pertinent terms that reflect the content of your thesis, such as ' Nitride', 'High Electron Mobility Transistor', and 'Piezoelectric Effect'.
10. Review all entries for accuracy and clarity, ensuring that formatting adheres to the specified guidelines.
11. Once all sections are completed, save your changes, and choose to either download, print, or share the completed form.

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