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AB02 Common Base NPN Transistor Characteristics Operating Manual Ver.1.1 An ISO 9001 : 2000 company 94101, Electronic Complex Pardesipura, Indore 452010, India Tel : 91731 2570301/02, 4211100 Fax:.

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The three important characteristics of a transistor are: 1. Input characteristic, 2. Output characteristic, 3. Constant-current transfer characteristic.

Rules for Bipolar Junction Transistors (BJTs): For an npn transistor, the voltage at the collector VC must be greater than the voltage at the emitter VE by at least a few tenths of a volt; otherwise, current will not flow through the collector-emitter junction, no matter what the applied voltage at the base.

Common Base (CB) Configuration of Transistor In CB Configuration, the base terminal of the transistor will be connected common between the output and the input terminals. The variation of emitter current(IE) with Base-Emitter voltage(VBE), keeping Collector Base voltage(VCB) constant.

The Common Base Amplifier is a type of BJT configuration or bipolar junction transistor, in which the input and output signals share the base terminal of the transistor, hence the name common base (CB).

Circuit diagram of Common Base NPN and PNP transistor: In all the configuration the base emitter junction is always forward biased and the collector base junction is reverse biased. In the common base configuration of NPN circuit emitter is N type base is of P type and collector is of N type.

In a NPN transistor working as a common base amplifier, current gain is 0.96 and emitter current is 7.2 mA .

Common Base (CB) Configuration of Transistor In CB Configuration, the base terminal of the transistor will be connected common between the output and the input terminals. The variation of emitter current(IE) with Base-Emitter voltage(VBE), keeping Collector Base voltage(VCB) constant.

Working of NPN Transistor The electron-hole recombination is very small in the base region since the base is lightly doped. Most of the electrons cross into the collector region. When the emitter is forward biased, electrons move towards the base and create the emitter current IE.

An NPN transistor is used in common emitter configuration as an amplifier with 1 kΩ load resistance. Signal voltage of 10 mV is applied across the base-emitter. This produces a 3 mA change in the collector current and 15 μA change in the base current of the amplifier.

For the sake of understanding, let us consider NPN transistor in CB configuration. When the emitter voltage is applied, as it is forward biased, the electrons from the negative terminal repel the emitter electrons and current flows through the emitter and base to the collector to contribute collector current.

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Form Packages
Adoption
Bankruptcy
Contractors
Divorce
Home Sales
Employment
Identity Theft
Incorporation
Landlord Tenant
Living Trust
Name Change
Personal Planning
Small Business
Wills & Estates
Packages A-Z
Form Categories
Affidavits
Bankruptcy
Bill of Sale
Corporate - LLC
Divorce
Employment
Identity Theft
Internet Technology
Landlord Tenant
Living Wills
Name Change
Power of Attorney
Real Estate
Small Estates
Wills
All Forms
Forms A-Z
Form Library
Customer Service
Terms of Service
DMCA Policy
About Us
Blog
Affiliates
Contact Us
Privacy Notice
Delete My Account
Site Map
All Forms
Search all Forms
Industries
Forms in Spanish
Localized Forms
Legal Guides
Real Estate Handbook
All Guides
Prepared for You
Notarize
Incorporation services
Our Customers
For Consumers
For Small Business
For Attorneys
Our Sites
US Legal Forms
USLegal
FormsPass
pdfFiller
signNow
airSlate workflows
DocHub
Instapage
Social Media
Call us now toll free:
1-877-389-0141
As seen in:
  • USA Today logo picture
  • CBC News logo picture
  • LA Times logo picture
  • The Washington Post logo picture
  • AP logo picture
  • Forbes logo picture
© Copyright 1997-2025
airSlate Legal Forms, Inc.
3720 Flowood Dr, Flowood, Mississippi 39232